From: Michael Moll [Michael.Moll@cern.ch]
Sent: Monday, 23 September, 2002 17:12
To: Michael Moll
Cc: Solid State Detector Seminar EP-TA1-SD
Subject: Solid State Detector Seminar this Wednesday

Dear all,

on Wednesday 25. September 9:30 (Room: 28-S-029) 
     we will continue in the series of the
        "Solid State Detector Seminar" 
             http://cern.ch/ssd/
  with two short presentations of 20 min each:
 
-----------------------------------------------

 "Isochronal Annealing Studies on irradiated 
        FZ, DOFZ and CZ silicon sensors"
   Beverley Rutherford Craig (EP-TA1-SD)
 
 As a part of her summer student project Beverley
 investigated the annealing behavior of proton and
 pion irradiated silicon pad detectors. The detectors 
 were produced from silicon with different oxygen content: 
 Standard Float Zone silicon (FZ), Diffusion Oxygenated FZ 
 silicon (DOFZ) and Czochralski silicon (CZ). In an isochronal
 annealing experiment up to 280C the so called "reverse annealing"
 of these materials was investigated in detail.
 --------------------------------------------------
 
   "Silicon containing Oxygen Dimers 
  - A radiation hard sensor material?" 
    Veronique Boisvert (EP-TA1-SD)
 
 Veronique is a CERN-Fellow spending part of her time in
 our group working on possible improvements of the radiation
 hardness of silicon sensors by introducing oxygen dimers into
 the bulk material. This technique consists in the transformation
 of the molecular oxygen in silicon into dimerized oxygen O2 and 
 was recently proposed as a radiation hardening technology. 
 A review of already performed experiments, experimental problems
 in performing the dimerization as well as defect kinetics simulations
 during the dimerization process and the irradiation of the sensors
 will be presented.
 --------------------------------------------------------
 
Cheers,
 Michael 


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