General Characteristics of Silicon

Chemical

Z=14

A=28.086

Atoms/cm3 = 4.991E22

Electron affinity = 4.05 V

Excitation potential = 173 eV

Lattice constant = 5.43095 Angstrom

Melting point = 1410.01 deg. C

Boiling point = 2680.01 deg. C

Latent heat of vapourisation = 170.02 kJ/mol

Latent heat of fusion = 46.48 kJ/mol

Mechanical

Density = 2.328 g/cm3

Linear coefficient of thermal expansion = 2.6E-6 /K

Specific heat capacity = 0.67839 J/g/K

Thermal conductivity = 1.5 W/cm/K

Thermal diffusivity = 0.9 cm2/s

Electrical

Relative dielectric constant = 11.9

Intrinsic resistivity = 2.3E5 Ohm cm

Intrinsic carrier concentration = 1.45E10 /cm3

Intrinsic Debye length = 24 microns

Conduction band state density = 2.8E19 /cm3

Valence band state density = 1.04E19 /cm3

Diffusion coefficient = kT*mu/q

Minority carrier lifetime = 2.5 ms

Electron mobility = 1500 cm2/V/s

Hole mobility = 450 cm2/V/s

Fano factor = 0.14

Nuclear

X ray levels: 1838.9, 148.7,99.2 eV