Institution:
List of people who will be involved:
Present activity:
- study of radiation-induced defects in Si
- study of defect-chemistry in GaAs
- study of defects after ion-implantation in SiC
Available equipment:
- 4 positron lifetime spectrometers equiped with cryoheads (20K - 600K)
- Doppler-broadening coincidence spectrometer
- UHV-compatible slow-positron beam system
- Hall-effect spectrometer
Area of interest of collaboration:
- Study of radiation-induced defects in silicon and other semiconductors
- correlated experiments of different methods to identify defects after
heavy-particle irradiation
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I hope this is all. I wish you a merry Christmas!
Yours,
Reinhard
______________________
Dr. R. Krause-Rehberg
Univ. Halle; FB
Physik
Fr.-Bach-Platz 6
06108 Halle / Germany
Tel. +49/0 - 345 -552 5567
Fax +49/0 - 345 -552 7160