Silicon
Radiation Detectors
1)
Production of 400 double-sided microstrip detectors for AMS2 experiment and
start-up of the production of 400 double sided microstrip detector for ALICE
experiment;
2)
development of fabrication technologies for single-sided detectors with
JFET-based integrated front-end electronics;
3)
development of p+/n and n+/n pixel detectors on thick Si wafers for medical
applications.
Other
research fields
Development
of micromechanical silicon sensors
Design
and characterization of CMOS optical imagers for automotive
applications
Field of
interest within this collaboration
Within
the collaboration, we can act as a technological partner, providing silicon
detectors and test structures and developing non standard process steps. More
specifically, with reference to the preliminary proposal for SMART project, we
are mainly interested in:
1.
Defect engineering
2.
New detector structures
Available
resources (Instrumentation, irradiation facilities, etc.)
Simulation
and design tools
TANNER
Tools for layout design.
SILVACO
for process simulation
ISE-TCAD
(Univ. Trento) for device simulation
Microfabrication
Facility
The
Micro Fabrication Laboratory is a ICs pilot line, housed in a clean room of
about 500 square meters (250sq.m class 10 plus 250sq.m class 100). In the
laboratory work 15 researchers and technicians, the pilot line is equipped
with:
a)
Ion
implanter (VARIAN E220 medium current);
b)
11
furnaces (annealing, oxidation and LPCVD);
c)
Mask
Aligner Karl Suss - MA 100,Track SVG 8600;
d)
dry
etching for : Aluminium (LAM Auto Etch 690), silicon oxide (Tegal -TSPS - 903e),
resist (Stripper Matrix 10X), polysilicon and silicon nitride (Cobrain Swafer
SC2);
e)
metal
deposition (Sputtering VARIAN 3180);
f)
In-line
process control: interferometer , 4-point probe and
microscopes;
g)
Dicing
Saw (Disco DAD 2H-6T).
Test
laboratory
The
laboratory allows to perform different test activities (parametric, functional,
electro-chemical, electro-optical, etc.), to support projects of the ITC-irst
microfabrication facility and is equipped with:
Manual
probe station (Karl Suess PM8);
Automatic
probe station (Electroglas 2001 CX);
Parametric
test system (HP 4062UX);
Functional
test system (ATE - HP82000);
General purpose instrumentation for semiconductor devices characterization (HP 4145B, HP4280A, HP4192A, Keithley 2410).