From: El¿bieta Nossarzewska-Or³owska [nossar_e@sp.itme.edu.pl]
Sent: Tuesday, 11 December, 2001 13:02
To: Michael Moll
Subject: new R&D
 
Dear Michael
 
We are interested in a new R&D collaboration:
 
 
The Institute of Electronic Materials Technology, Wolczynska 133 str., 01-919 Warszawa, POLAND
 
Contact person: dr Elzbieta Nossarzewska-Orlowska
 
Group members name                                   current activities                           fraction of time
1. Dr Zygmunt Luczynski                                 director of the Institute
2. Dr Elzbieta Nossarzewska-Orlowska           silicon wafers technology and
                                                                       characterisation, Si epitaxy                          20%
3. Dr Roman Kozlowski                                  C-DLTS, PITS                                           20%
4. Andrzej Brzozowski                                    spreading resistance, C-V                            10%
5. Piotr Zabierowski                                       silicon crystals pulling technology                   20%
6. Bronislaw Piatkowski                                 silicon wafers thinning                                   10%
7. Dr Andrzej Hruban                                     A3B5 semiconductors technology                10%
8. Dr Wlodzimierz Strupinski                          A3B5 MO CVD epitaxy (GaN layers)         10%
9. Andrzej Kowalik                                        e-beam masks                                             10%
10. Dr Lech Dobrzanski                                 A3B5 detectors technology                          10%
11. Barbara Surma                                         FTIR measurements                                     15%
12 Prof. Adam Barcz                                     SIMS laboratory                                          15%
 
 
Field of interest within this collaboration:
Silicon and A3B5 compounds for detectors – technology and characterisation.
 
-Silicon wafers fabrication (double side polishing, thinning; TD generation & anihilation)
-Silicon wafers characterisation (resistivity; geometrical parameters)
-Silicon epitaxial layers for thin detectors
-A3B5 detectors
-Masks fabrication
-Deep levels measurements
-FTIR & SIMS measurements
 
Available resources:
-FZ silicon puller (3”) available for research
-CZ Si pullers (up to 6 “); Magnetic CZ puller- installation in 2002;
-Production line for silicon wafers ( up to 6 “) fabrication;
-Thermal donors annealing furnace;
-Silicon epitaxy production line (up to 6”)
-Silicon wafers and epitaxial layers measurements equipment
-Silicon oxidation furnace (quartz tube up to 6 “)
-LEC pullers for GaAs, InP and other A3B5 compounds;
-MO CVD epitaxial reactors for GaN and A3B5 multilayers structure
-Fabrication line for detectors on A3B5
-Electron-beam master masks and reticles system
-FTIR spectrometers ( RT, LN and 10K)
-SIMS Cameca unit (deep profiling included)
-C-DLTS and Photo-Induced Transient Spectroscopy( high resistivity semiconductors) set-up.
 
 
Best regards
Elisabeth