From: Selenia Dittongo [Selenia.Dittongo@ts.infn.it] Sent: Friday, 04 January, 2002 15:32 To: Cinzia Da Via Cc: Christian Joram; michael.moll@cern.ch Subject: Re: 1st Workshop on RHSD - and new R&D proposal Dear Cinzia, Christian and Michael, we are a very small group (only two people!) fronm Trieste that would like to join the new R&D collaboration. In the following, the informations that you asked: - Name of the institution: I.N.F.N.-Sezione di Trieste - Contact person: Selenia Dittongo - Name of group members and fraction of their time devoted to this activity: Luciano Bosisio - 20% (bosisio@ts.infn.it) Selenia Dittongo - 30% (dittongo@ts.infn.it) - Current activities: * BaBar: electrical tests of double sided microstrip detectors for spare modules of the Silicon Vertex Tracker. Radiation hardness tests with high energy (GeV) electrons. * Alice: design, characterization and acceptance tests of the double sided microstrip detectors for the Inner Tracking System. * R&D: - design, electrical tests and simulation, performed with the ISE-TCAD software, of an "all-p-type" termination structure for silicon microstrip detectors, aimed at detector long-term stability improvement and fabrication process simplification. - design and test of compact semiconductor detection systems for ionising particles and X-rays, making use of silicon detectors in microstrip and pixel configurations, with front-end electronics either partially integrated on the detector substrate or connected to it by bump-bonding. For the fabrication of devices a dedicated process developed at ITC-IRST (Trento - Italy) will be employed. - study of the bulk and surface damage induced on silicon detectors by high energy electrons. Test structures and silicon detectors have been irradiated with 0.9-1.0 GeV electrons provided by the Elettra synchrotron radiation facility at Trieste (Italy). For the first time, bulk type inversion has been observe to occur after high energy electron irradiation. - Field of interest within this collaboration: - study of radiation effects on silicon devices both by high energy electrons tests at the Elettra synchrotron radiation facility and by irradiation with hadrons. Simulation of irradiated devices with the ISE-TCAD software. Extension of this study to oxigeneted silicon devices. - simulation, design and electrical characterization of new device structures for radiation sensors. - development of radiation sensors based on SiC (simulation, design, characterization). - Available resorces: - Elettra synchrotron radiation facility, able to release 1 GeV electrons. Set-up equipped with a computer controlled beam scanner. - ISE-TCAD software for device and process simulation - semiautomatic wafer prober Cascade Rel 5500 - Hewlett Packard 4156A and 4156C Precision Semiconductor Parameter Analyzers - Hewlett Packard 4248A 20Hz-1MHz Precision LCR Meter - Keithley 237 High Voltage (1100V) Source Measure Unit - Manual wafer prober Karl Suess PM5-III, equipped with thermal chuck (-10C to 200C) and cooled, back-illuminated CCD camera for detection of IR emission from breakdown processes in devices. Best regards, Selenia On Tue, 4 Dec 2001, Cinzia Da Via wrote: > > Dear Colleagues, > thank you very much for making the "1st Workshop on Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" a success! > While the memory of the interesting discussion is still vivid, we would like to remind all speakers > to send the electronic copy of their transparencies, which will be made available on the workshop web-page (http://cern.ch/ssd/rd). > > For the people who could not be present during the discussion on the formation of a new R&D collaboration, we would like to report that it was decided to present the proposal to the LHCC the 13/14 March 2002. For this purpose, we need a short note from each interested institution stating: > > -Name of the institution and contact person > -Names of group members and fraction of their time devoted to this activity > -Current activities > -Field of interest within this collaboration > -Available resources (Instrumentation, irradiation facilities etc.) > > The editing of the proposal must be finalised by the 25th of January 2001. Therefore, we set a deadline for > contributions to the proposal which imply major changes (structure of the document, research lines, etc..) to the 12th of December, while comments leading to minor changes will be accepted until the end of the year. > Please send your comments and input related to the document to Michael.Moll@cern.ch who acts as main editor. > > The reply to this message with the requested informations will insert the institution on a devoted mailing list, which will be used afterwards for communications and distribution of further versions of the proposal. > > Please feel free to forward this message to other collegues, who might be interested in joining the collaboration. > > Thank you and see you soon! > > Cinzia, Christian and Michael > > > > > > > --------------------------------------------------------------- > > Cinzia Da Via' > Electronics and Computer Engineering Dept > Brunel University > Uxbridge, UK > > tel. +44 1895 816284 > >