| Workshop Presentations |
Last update: 03/07/2002 17:39 Michael
| Wednesday, 28.11.2001 | |
| Opening Dieter Schlatter (CERN EP - Division leader) |
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| Session I --
Very high luminosity colliders and their requirements Chairperson: Cinzia Da Via |
Electronic |
|
Physics at Very High
Luminosity Colliders (VHLC) |
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| Present Status and Future Trends
on Radiation Tolerance in Large Scale Tracking Systems Guido Tonelli (University of Pisa-INFN) |
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| Silicon Tracking at the Tevatron Steven Worm (Rutgers University,USA) |
pdf-3.6MB |
| Future trends in radiation hard
electronics Federico Faccio (CERN EP) |
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| Monolithic CMOS Pixel Sensors for
Particle Tracking G.Claus, C.Colledani, G.Deptuch, Wojciech Dulinski, I. Gornushkin, M. Winter (LEPSI, Strasbourg, France) |
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| A CCD vertex detector for
the future TeV-scale e+e- linear collider Chris Damerell, on behalf of the LCFI collaboration (Rutherford Appleton Lab, UK) |
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| Session II --
New device structures Chairperson: N.N. |
Electronic |
| Silicon 3D radiation sensors:
general characteristics; irradiation test results Sherwood Parker and Christopher Kenney (LBL Berkeley,USA) Paper-preprint: "Results from 3D silicon sensors with wall electrodes: near-cell-edge sensitivity measurements as a preview of active-edge sensors" Christopher J. Kenney, Sherwood Parker, and Edith Walckiers pdf-280KB |
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| Novel Semi-3d Detector
Structures for Improved Radiation Tolerance Zheng Li (Brookhaven National Lab, USA) |
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| Fabrication of 3D detectors
at The Detector Development Group of The University of Glasgow Richard Bates, M.Rahman, G.Pellegrini, P.Roy, K.Mathieson, D.Jones, V.O'Shea, K.M.Smith, M.Horn, P.Thornton, J.Melone (Glasgow University) |
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| Low
mass semiconductor trackers using thin pixel detectors Erik Heijne (CERN EP) |
pdf - 1.6MB |
| Session
III -- Defect Engineered Silicon Chairperson: N.N. |
Electronic |
| Oxygen defects in Silicon Robert Jones, J.Coutinho (School of Physics, University of Exeter, S.Öberg (Department of Mathmatics, Lulea Universtiy of Technology), P.R.Briddon (Department of Physics, University of Newcastle upon Tyne) |
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| ROSE - oxygenated silicon Francois Lemeilleur, Gunnar Lindström, Steve Watts for the CERN RD48 (ROSE) collaboration |
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| Can silicon operate beyond 1015
n/cm2? Defect Engineering - Oxygen Dimer Si S.J. Watts, C. Da Via', A. Karpenko, A.Kok (Brunel University, London, UK) |
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| Aspects of CCE in irradiated silicon
detectors and advantages using p-type silicon substrates Gianluigi Casse, Phil Allport, Salva Marti y Garcia (Liverpool University) |
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| Processing Effects on Standard and
Oxygenated Diodes Irradiated by Neutrons Riccardo Rando, A.Andrighetto, D. Bisello, A. Candelori, A. Kaminski, D.Pantano (INFN Padova e Dip. di Fisica di Padova), J. Wyss (INFN Pisa e Universita` di Cassino), V. Cindro (Jozef Stefan Institute, Ljubliana), C. Martinez, M.Lozano (Institut de Microelectronica de Barcelona) |
|
| Thursday 29.11.2001 | |
| Session
III -- Defect Engineered Silicon (continued) Chairperson: N.N. |
Electronic |
| Preliminary Results of the CiS-Hamburg SRD Project Gunnar Lindstroem, E.Fretwurst, J.Stahl(University of Hamburg), I.Pintilie (NIMP Bucharest, Romania), R.Roeder(CiS Institute for Microsensors, Erfurt) |
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| Bulk damage effects in standard and oxygen enriched
silicon induced by Co-60 gamma radiation Eckhart Fretwurst, G. Lindström, J. Stahl (Institute for Experimental Physics, University of Hamburg), Z. Li, E.Verbitskaya (Brookhaven National Laboratory), I. Pintillie (NIMP, Bucharest-Magurele) |
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| Deep electron trapping level in 60Co
gamma irradiated silicon detectors-possible V2O defect-investigated by
C-DLTS method Ioana Pintilie (National Institute of Materials Physics, Bucharest, Romania), E. Fretwurst, G. Lindström, J.Stahl (Hamburg University) |
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| Material characterization of
unirradiated diodes for the CiS-HH SRD project Jörg Stahl, E. Fretwurst, G. Lindström (Hamburg University), I.Pintilie (National Institute of Materials Physics, Bucharest, Romania) |
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| SIMS measurement of oxygen in FZ silicon Adam Barcz1,2, M. ZIELINSKI1, E. NOSSARZEWSKA3, G.LINDSTROEM4 (1) Institute of Physics, Polish Academy of Sciences // (2) Institute of Electronics Technology, Warsaw, Poland // (3) Institute of Electronic Materials Technology, Warsaw, Poland // (4) University of Hamburg,Germnany) |
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| The Radiation Hardness of the ATLAS
Pixel Sensors Olaf Krasel for the ATLAS Pixel Collaboration (University of Dortmund,Germany) |
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| Comparitive Irradiation Test of an Oxygenated
and a Non-Oxygenated Silicon Microstrip Detector Iris Abt (MPI Munich, Germany / HERA-B) |
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| New results on standard diodes
irradiated with 34 MeV proton beam Valeria Radicci (Università degli studi di Bari, Italy) |
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| Increasing of Radiation Hardness
of Silicon for Detectors by preliminary irradiation P. G. Litovchenko1, W. Wahl2, M.Glaser3, L.I.Barabash1, A. A. Groza1, A. P. Dolgolenko1, A.Ya.Karpenko1, V. I. Khivrych1, O. P. Litovchenko1, V. F. Lastovetsky1 1SC Institute for Nuclear Research of NASU, Prospect Nauki 47, 03028, Kiev, Ukraine. 2GSF, Institute of Radiation Protection, 85764 Neuherberg, Germany 3CERN - EP, Geneva |
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| Session
IV -- Operational Conditions I - Defect Characterization Chairperson: N.N. |
Electronic |
| Irradiation damage in semiconductors
studied by positron annihilation Reinhard Krause-Rehberg, A. Polity, V. Bondarenko (Martin- Luther- Universität Halle- Wittenberg, Germany) |
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| On-line DLTS and
Laplace-DLTS investigations of defects in low-temperature electron
irradiated boron-doped Si Nikolaj Zangenberg and Arne Nylandsted Larsen, (University of Aarhus, Danmark) |
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| Systematic study of
effective trapping times Gregor Kramberger, M.Batic, V.Cindro, I.Mandic, M.Mikuz, M.Zavrtanik (Jozef Stefan Institute, Ljubljana) (Gregor works now at DESY, Hamburg) |
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| Session
V -- Operational Conditions II - Low-temperature Detectors Chairperson: N.N. |
Electronic |
| The Discovery of the Lazarus
Effect V.G. Palmieri, C. Da Via, Luca Casagrande |
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| Lazarus Effect - Explanation and
Modeling Vladimir Eremin on behalf of RD39 (Ioffe Physico-technical Institute, St. Petersburg Russia) |
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| Cryogenic Silicon Detectors
to Measure High-Intensity Beams Luca Casagrande (CERN) |
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| Silicon Microstrip Detectors and
the Lazarus Effect Paula Collins (CERN) |
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| Conceptual design of a
low-temperature tracker Tapio Niinikoski et al. (CERN, RD39) |
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| Forward bias operation of
irradiated silicon detectors Alexandre Chilingarov (Lancaster Univ., U.K.) |
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| Simulation of defect
formation in different hadron irradiation environments Mika Huhtinen (CERN) |
|
| Friday 30.11.2001 | |
| Session
VI -- Other Semiconductor Detectors Chairperson: Zheng Li |
Electronic |
| Present Status of and
Prospects for Radiation Hard CVD Diamond Detectors Harris Kagan (Ohio State University) on behalf of the RD42 Collaboration |
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| The mechanisms of radiation damage of
diamond Alison Mainwood, Mark Newton and Brendan Campbell (King's College London) |
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| New Semiconductor Materials
for Radiation Detectors Paul J. Sellin (University of Surrey, UK) |
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| Studies of silicon carbide
as a radiation hard detector material Mahfuzur Rahman, A Al-Ajili, R Bates, A Blue, W Cunningham, D.Davidson, S.Devine, F Doherty, L Haddad, M Horn, P Jordan, J.Marchal,K Mathieson, J Melone, G Pellegrini, P Roy, J Scott, V.O’Shea, KM Smith, J Watt (Glasgow University, U.K.) |
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| RADIATION-HARD
POLYCRYSTALLINE CdTe for LHC Luminosity Monitor Massimo Placidi; Edouard Rossa; Hermann Schmickler (CERN) |
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| Session
VII -- Modeling of defect formation and device simulations Chairperson: Michael Moll |
Electronic |
| What can we learn from photoluminescence
studies on ion-implantation damage in silicon? Gordon Davies, Alison Mainwood and Ruth Harding (King's College London, UK) |
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| Modeling of irradiated
detector characteristics and related results on the parameters of
radiation induced deep traps V. Eremin, E.Verbitskaya (Ioffe Physico-technical Institute, St. Petersburg Russia), Z.Li (Brookhaven National Laboratory, USA) |
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| Influence of trapping on silicon
microstrip detector design and performance Gregor Kramberger, V. Cindro, I. Mandic, M. Mikuz, M.Zavrtanik (Jozef Stefan Institute, Ljubljana) (Gregor now works at DESY,Hamburg) |
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| End of Workshop | |
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| Discussion about the formation of a new R&D project | Electronic version |
| Presentations of producers /
institutes / radiation facilities/ Discussions Preliminary Agenda Presentations of producers / radiation facilities / institutes: |
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CiS Institut für Mikrosensorik gGmbH, Erfurt, Germany |
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| NCSR "Demokritos" | |
| Russian Research Center “ Kurchatov Institute”, Moscow, Russia | |
| FYNU Louvain-la-Neuve | |
| CERN, Radiation Facilities in the East Hall (CERN-EP-TA1-SD) | pdf-1.6MB |
| Organizational aspects: | |
|
Organizing the research work and the collaboration, common
fund, the next steps towards a collaboration, how to find a
spokesperson? |
1st
Workshop on
Radiation hard semiconductor devices for very high luminosity colliders, |